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Codoped direct-gap semiconductor scintillators

United States Patent

July 29, 2008
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.
Derenzo; Stephen Edward (Pinole, CA), Bourret-Courchesne; Edith (Berkeley, CA), Weber; Marvin J. (Danville, CA), Klintenberg; Mattias K. (Berkeley, CA)
The Regents of the University of California (Oakland, CA)
11/ 382,883
May 11, 2006
STATEMENT OF GOVERNMENTAL SUPPORT The United States Government has rights in this invention pursuant to Contract No. DE-AC03-76SF00098 between the United States Department of Energy and the University of California.