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Ultra-high current density thin-film Si diode

United States Patent

April 22, 2008
View the Complete Patent at the US Patent & Trademark Office
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A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.
Wang; Qi (Littleton, CO)
Wang; Qi (Littleton, CO)
10/ 488,902
April 29, 2003
CONTRACTUAL ORIGIN OF THE INVENTION The United States Government has rights in this invention under Contract No. DE-AC3699GO10337 between the United States Department of Energy and the National Renewable Energy Laboratory, a division of the Midwest Research Institute.