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Manufacture of silicon-based devices having disordered sulfur-doped surface layers

United States Patent

April 8, 2008
View the Complete Patent at the US Patent & Trademark Office
The present invention provides methods of fabricating a radiation-absorbing semiconductor wafer by irradiating at least one surface location of a silicon substrate, e.g., an n-doped crystalline silicon, by a plurality of temporally short laser pulses, e.g., femtosecond pulses, while exposing that location to a substance, e.g., SF.sub.6, having an electron-donating constituent so as to generate a substantially disordered surface layer (i.e., a microstructured layer) that incorporates a concentration of that electron-donating constituent, e.g., sulfur. The substrate is also annealed at an elevated temperature and for a duration selected to enhance the charge carrier density in the surface layer. For example, the substrate can be annealed at a temperature in a range of about 700 K to about 900 K.
Carey, III; James Edward (Newton, MA), Mazur; Eric (Concord, MA)
President and Fellows of Harvard College (Cambridge, MA)
10/ 950,248
September 24, 2004
FEDERALLY SPONSORED RESEARCH The invention was made with Government support under contract DE-FC36-016011051 awarded by Department of Energy (DOE). The Government has certain rights in the invention.