The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.
STATEMENT OF GOVERNMENT RIGHTS
The invention described herein was made with government support under National Science Foundation Grant Number DMR-9902431; National Science Foundation Grant Number 28030; and Department of Energy Grant Number ED-FG03-96ER45604. The United States Government has certain rights in the invention.