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Wafer bonded epitaxial templates for silicon heterostructures

United States Patent

7,341,927
March 11, 2008
View the Complete Patent at the US Patent & Trademark Office
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A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.
Atwater, Jr.; Harry A. (So. Pasadena, CA), Zahler; James M. (Pasadena, CA), Morral; Anna Fontcubera I (Paris, FR)
California Institute of Technology (Pasadena, CA)
11/ 004,808
December 7, 2004
FEDERAL SUPPORT STATEMENT This invention was made with government support under Contract No. DE-AC36-99G010337, Midwest Research Institute Subcontract No. ACQ-1-30619-13 awarded by the Department of Energy and Contract No. NAS3-02201, Subcontract No. 200492; LEW-17946-1 awarded by NASA. The government has certain rights in the invention.