The invention provides hydrogen selective metal-insulator-semiconductor sensors which include a layer of hydrogen selective material. The hydrogen selective material can be polyimide layer having a thickness between 200 and 800 nm. Suitable polyimide materials include reaction products of benzophenone tetracarboxylic dianhydride 4,4-oxydianiline m-phenylene diamine and other structurally similar materials.
ACKNOWLEDGEMENT OF GOVERNMENT SUPPORT
This invention was funded, at least in part, by the United States Department of Energy under grant number DE-AC04-94AL85000. The U.S. government has certain rights in this invention.