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Ultrahigh density ferroelectric storage and lithography by high order ferroic switching

United States Patent

7,292,768
November 6, 2007
View the Complete Patent at the US Patent & Trademark Office
Oak Ridge National Laboratory - Visit the Partnerships Directorate Website
A method for switching the direction of polarization in a relatively small domain in a thin-film ferroelectric material whose direction of polarization is oriented normal to the surface of the material involves a step of moving an electrically-chargeable tip into contact with the surface of the ferroelectric material so that the direction of polarization in a region adjacent the tip becomes oriented in a preselected direction relative to the surface of the ferroelectric material. The tip is then pressed against the surface of the ferroelectric material so that the direction of polarization of the ferroelectric material within the area of the ferroelectric material in contact with the tip is reversed under the combined effect of the compressive influence of the tip and electric bias.
Kalinin; Sergei V. (Knoxville, TN), Baddorf; Arthur P. (Knoxville, TN), Lee; Ho Nyung (Oak Ridge, TN), Shin; Junsoo (Knoxville, TN), Gruverman; Alexei L. (Raleigh, NC), Karapetian; Edgar (Malden, MA), Kachanov; Mark (Arlington, MA)
UT-Battelle, LLC (Oak Ridge, TN)
11/ 409,740
20070274668
April 24, 2006
This invention was made with Government support under Contract No. DE-ACO5-000R22725 awarded by the U.S. Department of Energy to UT-Battelle, LLC, and the Government has certain rights in the invention.