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High rate buffer layer for IBAD MgO coated conductors

United States Patent

August 21, 2007
View the Complete Patent at the US Patent & Trademark Office
Los Alamos National Laboratory - Visit the Technology Transfer Division Website
Articles are provided including a base substrate having a layer of an oriented material thereon, and, a layer of hafnium oxide upon the layer of an oriented material. The layer of hafnium oxide can further include a secondary oxide such as cerium oxide, yttrium oxide, lanthanum oxide, scandium oxide, calcium oxide and magnesium oxide. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of hafnium oxide or layer of hafnium oxide and secondary oxide.
Foltyn; Stephen R. (Los Alamos, NM), Jia; Quanxi (Los Alamos, NM), Arendt; Paul N. (Los Alamos, NM)
Los Alamos National Security, LLC (Los Alamos, NM)
11/ 021,800
December 23, 2004
STATEMENT REGARDING FEDERAL RIGHTS This invention was made with government support under Contract No. W-7405-ENG-36 awarded by the U.S. Department of Energy. The government has certain rights in the invention.