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Wafer characteristics via reflectometry and wafer processing apparatus and method

United States Patent

July 3, 2007
View the Complete Patent at the US Patent & Trademark Office
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Wafer Characteristics via Reflectometry and Wafer Processing Apparatus and Method
An exemplary system includes a measuring device to acquire non-contact thickness measurements of a wafer and a laser beam to cut the wafer at a rate based at least in part on one or more thicknesses measurements. An exemplary method includes illuminating a substrate with radiation, measuring at least some radiation reflected from the substrate, determining one or more cutting parameters based at least in part on the measured radiation and cutting the substrate using the one or more cutting parameters. Various other exemplary methods, devices, systems, etc., are also disclosed.
Sopori; Bhushan L. (Denver, CO)
Midwest Research Institute (Kansas City, MO)
10/ 547,579
October 6, 2004
CONTRACTUAL ORIGIN OF THE INVENTION The United States Government has rights in this invention pursuant to Contract No. DE-AC36-99GO10337 between the United States Department of Energy and the National Renewable Energy Laboratory, a Division of Midwest Research Institute.