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Design and fabrication of 6.1-.ANG. family semiconductor devices using semi-insulating A1Sb substrate

United States Patent

May 29, 2007
View the Complete Patent at the US Patent & Trademark Office
Lawrence Livermore National Laboratory - Visit the Industrial Partnerships Office Website
For the first time, an aluminum antimonide (AlSb) single crystal substrate is utilized to lattice-match to overlying semiconductor layers. The AlSb substrate establishes a new design and fabrication approach to construct high-speed, low-power electronic devices while establishing inter-device isolation. Such lattice matching between the substrate and overlying semiconductor layers minimizes the formation of defects, such as threaded dislocations, which can decrease the production yield and operational life-time of 6.1-.ANG. family heterostructure devices.
Sherohman; John W. (Livermore, CA), Coombs, III; Arthur W. (Patterson, CA), Yee; Jick Hong (Livermore, CA), Wu; Kuang Jen J. (Cupertino, CA)
The Regents of the University of California (Oakland, CA)
10/ 856,175
May 28, 2004
The United States Government has rights in this invention pursuant to Contract No. W-7405-ENG-48 between the United States Department of Energy and the University of California for the operation of Lawrence Livermore National Laboratory.