An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.
STATEMENT OF GOVERNMENT SUPPORT
Development of this invention was supported at least in part by the U.S. Department of Energy through DOE/EPSCOR grant 0402-03027-21-0000. The Government may have certain rights in the invention.