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Low temperature production of large-grain polycrystalline semiconductors

United States Patent

April 10, 2007
View the Complete Patent at the US Patent & Trademark Office
An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.
Naseem; Hameed A. (Fayetteville, AR), Albarghouti; Marwan (Loudonville, NY)
The Board of Trustees of the University of Arkansas (Little Rock, AR)
10/ 972,760
October 25, 2004
STATEMENT OF GOVERNMENT SUPPORT Development of this invention was supported at least in part by the U.S. Department of Energy through DOE/EPSCOR grant 0402-03027-21-0000. The Government may have certain rights in the invention.