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ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping

United States Patent

February 20, 2007
View the Complete Patent at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
A process for making a thin film ZnO/Cu(InGa)Se.sub.2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se.sub.2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se.sub.2 layer on the metal back contact on the glass substrate to a temperature range between about C. to about C.; subjecting the heated layer of Cu(InGa)Se.sub.2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se.sub.2.
Ramanathan; Kannan (Golden, CO), Hasoon; Falah S. (Golden, CO), Asher; Sarah E. (Wheat Ridge, CO), Dolan; James (Arvada, CO), Keane; James C. (Lakewood, CO)
Midwest Research Institute (Kansas City, MO)
10/ 534,217
September 3, 2003
CONTRACTUAL ORIGIN OF THE INVENTION The United States Government has rights in this invention under Contract No. DE-AC3699GO10093 between the United States Department of Energy and the National Renewable Energy Laboratory, a division of the Midwest Research Institute.