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Measuring bi-directional current through a field-effect transistor by virtue of drain-to-source voltage measurement

United States Patent

December 26, 2006
View the Complete Patent at the US Patent & Trademark Office
A method and apparatus for measuring current, and particularly bi-directional current, in a field-effect transistor (FET) using drain-to-source voltage measurements. The drain-to-source voltage of the FET is measured and amplified. This signal is then compensated for variations in the temperature of the FET, which affects the impedance of the FET when it is switched on. The output is a signal representative of the direction of the flow of current through the field-effect transistor and the level of the current through the field-effect transistor. Preferably, the measurement only occurs when the FET is switched on.
Turner; Steven Richard (Carmel, IN)
Delphi Technologies, Inc. (Troy, MI)
10/ 925,025
August 24, 2004
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT The U.S. Government has a paid-up license in this invention and the right in limited circumstances to require the patent owner to license others on reasonable terms as provided for by the terms of Contract No. DE-FC36-02G012020 awarded by the Department of Energy.