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Selective etching of silicon carbide films

United States Patent

December 19, 2006
View the Complete Patent at the US Patent & Trademark Office
A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.
Gao; Di (Albany, CA), Howe; Roger T. (Martinez, CA), Maboudian; Roya (Orinda, CA)
The Regents of the University of California (Oakland, CA)
10/ 613,508
July 3, 2003
STATEMENT AS TO RIGHTS TO INVENTIONS MADE UNDER FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT This invention was made with Government support under Grant (Contract) No. N660010118967 awarded by DARPA, and Grant (Contract) No. 9782 awarded by the Department of Energy/Sandia National Laboratories. The Government has certain rights to this invention.