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Nanocrystal structures

United States Patent

December 19, 2006
View the Complete Patent at the US Patent & Trademark Office
A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.
Eisler; Hans J. (Weingarten/Baden, DE), Sundar; Vikram C. (Hoboken, NJ), Walsh; Michael E. (Everett, MA), Klimov; Victor I. (Los Alamos, NM), Bawendi; Moungi G. (Boston, MA), Smith; Henry I. (Sudbury, MA)
Massachusetts Institute of Technology (Cambridge, MA)
10/ 294,742
November 15, 2002
FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT The U.S. Government may have certain rights in this invention pursuant to Grant No. DMR-98-08941 awarded by the National Science Foundation and Grant No. NSF-CHE-97-08265 awarded by the U.S. Department of Energy.