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Method of making diode structures

United States Patent

November 28, 2006
View the Complete Patent at the US Patent & Trademark Office
A method of making a diode structure includes the step of depositing a transparent electrode layer of any one or more of the group ZnO, ZnS and CdO onto a substrate layer, and depositing an active semiconductor junction having an n-type layer and a p-type layer onto the transparent electrode layer under process conditions that avoid substantial degradation of the electrode layer. A back electrode coating layer is applied to form a diode structure.
Compaan; Alvin D. (Sylvania, OH), Gupta; Akhlesh (Sylvania, OH)
University of Toledo (Toledo, OH)
10/ 722,643
November 26, 2003
GOVERNMENT INTERESTS The United States Government has certain rights in this invention pursuant to Contract Nos. NREL # AAT-1-30620-09 and NREL # NDJ-1-30630-02 awarded by the U.S. Department of Energy.