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Method to control artifacts of microstructural fabrication

United States Patent

September 12, 2006
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
New methods for fabrication of silicon microstructures have been developed. In these methods, an etching delay layer is deposited and patterned so as to provide differential control on the depth of features being etched into a substrate material. Compensation for etching-related structural artifacts can be accomplished by proper use of such an etching delay layer.
Shul; Randy J. (Albuquerque, NM), Willison; Christi G. (Albuquerque, NM), Schubert; W. Kent (Albuquerque, NM), Manginell; Ronald P. (Albuquerque, NM), Mitchell; Mary-Anne (Edgewood, NM), Galambos; Paul C. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
10/ 165,356
June 6, 2002
GOVERNMENT RIGHTS This invention was made with Government support under Contract DE-AC04-94AL85000 awarded by the U.S. Department of Energy. The Government has certain rights in the invention.