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Narrow energy band gap gallium arsenide nitride semi-conductors and an ion-cut-synthesis method for producing the same

United States Patent

June 6, 2006
View the Complete Patent at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
A method for forming a semi-conductor material is provided that comprises forming a donor substrate constructed of GaAs, providing a receiver substrate, implanting nitrogen into the donor substrate to form an implanted layer comprising GaAs and nitrogen. The implanted layer is bonded to the receiver substrate and annealed to form GaAsN and nitrogen micro-blisters in the implanted layer. The micro-blisters allow the implanted layer to be cleaved from the donor substrate.
Weng; Xiaojun (Ann Arbor, MI), Goldman; Rachel S. (Ann Arbor, MI)
The Regents of the University of Michigan (Ann Arbor, MI)
10/ 706,737
November 12, 2003
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT This invention was made with government support of grant #ACQ-1-30619-14 from National Renewable Energy Laboratory and grant #F49620-00-1-0328 from Air Force Office of Scientific Research. The government has certain rights in the invention.