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Method for the manufacture of phase shifting masks for EUV lithography

United States Patent

April 4, 2006
View the Complete Patent at the US Patent & Trademark Office
Lawrence Livermore National Laboratory - Visit the Industrial Partnerships Office Website
A method for fabricating an EUV phase shift mask is provided that includes a substrate upon which is deposited a thin film multilayer coating that has a complex-valued reflectance. An absorber layer or a buffer layer is attached onto the thin film multilayer, and the thickness of the thin film multilayer coating is altered to introduce a direct modulation in the complex-valued reflectance to produce phase shifting features.
Stearns; Daniel G. (Los Altos, CA), Sweeney; Donald W. (San Ramon, CA), Mirkarimi; Paul B. (Sunol, CA), Barty; Anton (Livermore, CA)
EUV Limited Liability Corporation (Santa Clara, CA)
10/ 256,454
September 27, 2002
The United States Government has rights in this invention pursuant to Contract No. W-7405-ENG-48 between the United States Department of Energy and the University of California for the operation of Lawrence Livermore National Laboratory.