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Method of junction formation for CIGS photovoltaic devices

United States Patent

March 28, 2006
View the Complete Patent at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.
Delahoy; Alan E. (Rocky Hill, NJ)
Energy Photovoltaics (Princeton, NJ)
10/ 251,337
September 20, 2002
GOVERNMENT SPONSORED RESEARCH This invention was made with government support under NREL Subcontract No. ZAK-8-17619-21, Prime Contract No. DE-AC36-99GO10337 awarded by the Department of Energy. The government has certain rights in this invention.