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Magnetic transparent conducting oxide film and method of making

United States Patent

March 14, 2006
View the Complete Patent at the US Patent & Trademark Office
Pacific Northwest National Laboratory - Visit the Technology Commercialization Program Website
Cobalt-nickel oxide films of nominal 100 nm thickness, and resistivity as low as 0.06 have been deposited by spin-casting from both aqueous and organic precursor solutions followed by annealing at C. in air. An increase in film resistivity was found upon substitution of other cations (e.g., Zn.sup.2+, Al.sup.3+) for Ni in the spinel structure. However, some improvement in the mechanical properties of the films resulted. On the other hand, addition of small amounts of Li decreased the resistivity. A combination of XRD, XPS, UV/Vis and Raman spectroscopy indicated that NiCo.sub.2O.sub.4 is the primary conducting component and that the conductivity reaches a maximum at this stoichiometry. When x<0.67, NiO forms leading to an increase in resistivity; when x>0.67, the oxide was all spinel but the increased Co content lowered the conductivity.
Windisch, Jr.; Charles F. (Richland, WA), Exarhos; Gregory J. (Richland, WA), Sharma; Shiv K. (Honolulu, HI)
Battelle Memorial Institute (Richland, WA)
10/ 854,546
May 25, 2004
This invention was made with Government support under Contract DE-AC0676RLO1830 awarded by the U.S. Department of Energy. The Government has certain rights in the invention