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Light emitting diode with porous SiC substrate and method for fabricating

United States Patent

December 6, 2005
View the Complete Patent at the US Patent & Trademark Office
A method and apparatus for forming a porous layer on the surface of a semiconductor material wherein an electrolyte is provided and is placed in contact with one or more surfaces of a layer of semiconductor material. The electrolyte is heated and a bias is introduced across said electrolyte and the semiconductor material causing a current to flow between the electrolyte and the semiconductor material. The current forms a porous layer on the one or more surfaces of the semiconductor material in contact with the electrolyte. The semiconductor material with its porous layer can serve as a substrate for a light emitter. A semiconductor emission region can be formed on the substrate. The emission region is capable of emitting light omnidirectionally in response to a bias, with the porous layer enhancing extraction of the emitting region light passing through the substrate.
Li; Ting (Ventura, CA), Ibbetson; James (Santa Barbara, CA), Keller; Bernd (Santa Barbara, CA)
Cree, Inc. (Goleta, CA)
10/ 676,953
September 30, 2003
This invention was made with Government support under the Department of Energy (NETL) Contract No. DE-FC26-00NT40985. The Government has certain rights in this invention