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Long wavelength vertical cavity surface emitting laser

United States Patent

August 16, 2005
View the Complete Patent at the US Patent & Trademark Office
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Selectively oxidized vertical cavity lasers emitting near 1300 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave below, at and above room temperature. The lasers employ two n-type Al.sub.0.94 Ga.sub.0.06 As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the active region, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to C.
Choquette; Kent D. (Urbana, IL), Klem; John F. (Albuquerque, NM)
Sandia Corporation (Albuquerque, NM)
09/ 871,492
May 31, 2001
This invention was made with Government support under Contract No. DE-AC04-94AL85000 awarded by the U.S. Department of Energy. The Government has certain rights in this invention.