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Hafnium nitride buffer layers for growth of GaN on silicon

United States Patent

August 16, 2005
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.
Armitage; Robert D. (Kyoto, JP), Weber; Eicke R. (Piedmont, CA)
The Regents of the University of California (Oakland, CA)
10/ 439,952
May 16, 2003
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT This invention was made with government support under Grant (Contract) No. DE-AC03-76F00098 awarded by The United States Department of Energy to The Regents of the University of California. The government has certain rights to this invention.