Skip to Content
Find More Like This
Return to Search

Ion beam lithography system

United States Patent

August 2, 2005
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
A maskless plasma-formed ion beam lithography tool provides for patterning of sub-50 nm features on large area flat or curved substrate surfaces. The system is very compact and does not require an accelerator column and electrostatic beam scanning components. The patterns are formed by switching beamlets on or off from a two electrode blanking system with the substrate being scanned mechanically in one dimension. This arrangement can provide a maskless nano-beam lithography tool for economic and high throughput processing.
Leung; Ka-Ngo (Hercules, CA)
The Regents of the University of California (Oakland, CA)
09/ 641,467
August 17, 2000
GOVERNMENT RIGHTS The U.S. Government has rights in this invention pursuant to Contract No. DE-AC03-76SF00098 between the U.S. Department of Energy and the University of California.