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High carrier concentration p-type transparent conducting oxide films

United States Patent

June 21, 2005
View the Complete Patent at the US Patent & Trademark Office
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A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.
Yan; Yanfa (Littleton, CO), Zhang; Shengbai (Lakewood, CO)
Midwest Research Instittue (Kansas City, MO)
10/ 344,446
February 11, 2003
CONTRACTUAL ORIGIN OF THE INVENTION The United States Government has rights in this invention pursuant to Contract No. DE-AC36-99GO10337 between the United States Department of Energy and the National Renewable Energy Laboratory, a division of the Midwest Research Institute.