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Method of manufacturing semiconductor having group II-group VI compounds doped with nitrogen

United States Patent

6,852,614
February 8, 2005
View the Complete Patent at the US Patent & Trademark Office
A method of making a semiconductor comprises depositing a group II-group VI compound onto a substrate in the presence of nitrogen using sputtering to produce a nitrogen-doped semiconductor. This method can be used for making a photovoltaic cell using sputtering to apply a back contact layer of group II-group VI compound to a substrate in the presence of nitrogen, the back coating layer being doped with nitrogen. A semiconductor comprising a group II-group VI compound doped with nitrogen, and a photovoltaic cell comprising a substrate on which is deposited a layer of a group II-group VI compound doped with nitrogen, are also included.
Compaan; Alvin D. (Sylvania, OH), Price; Kent J. (Toledo, OH), Ma; Xianda (Milpitas, CA), Makhratchev; Konstantin (Fremont, CA)
University of Maine (Toledo, OH)
09/ 815,958
March 23, 2001
GOVERNMENT INTERESTS The United States Government has certain rights in this invention pursuant to Contract No. NERL-ZAF-8-17619-14 awarded by the U.S. Department of Energy.