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Isoelectronic co-doping

United States Patent

November 9, 2004
View the Complete Patent at the US Patent & Trademark Office
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Isoelectronic co-doping of semiconductor compounds and alloys with deep acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, N and Bi, to customize solar cells, thermal voltaic cells, light emitting diodes, photodetectors, and lasers on GaP, InP, GaAs, Ge, and Si substrates. Isoelectronically co-doped Group II-VI compounds and alloys are also included.
Mascarenhas; Angelo (Lakewood, CO)
Midwest Research Institute (Kansas City, MO)
09/ 841,691
April 24, 2001
CONTRACTUAL ORIGIN OF THE INVENTION The United States Government has rights in this invention under Contract No. DE-AC36-99GO10337 between the United States Department of Energy and the National Renewable Energy Laboratory, a Division of the Midwest Research Institute.