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Method for nanomachining high aspect ratio structures

United States Patent

November 9, 2004
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
A nanomachining method for producing high-aspect ratio precise nanostructures. The method begins by irradiating a wafer with an energetic charged-particle beam. Next, a layer of patterning material is deposited on one side of the wafer and a layer of etch stop or metal plating base is coated on the other side of the wafer. A desired pattern is generated in the patterning material on the top surface of the irradiated wafer using conventional electron-beam lithography techniques. Lastly, the wafer is placed in an appropriate chemical solution that produces a directional etch of the wafer only in the area from which the resist has been removed by the patterning process. The high mechanical strength of the wafer materials compared to the organic resists used in conventional lithography techniques with allows the transfer of the precise patterns into structures with aspect ratios much larger than those previously achievable.
Yun; Wenbing (Walnut Creek, CA), Spence; John (Concord, CA), Padmore; Howard A. (Berkeley, CA), MacDowell; Alastair A. (Berkeley, CA), Howells; Malcolm R. (Berkeley, CA)
The Regents of the University of California (Oakland, CA)
09/ 927,428
August 9, 2001
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT This invention was made with U.S. Government support under Contract No. DE-AC03-76SF00098 between the U.S. Department of Energy and the University of California for operation of Lawrence Berkeley Laboratory. The government may have certain rights in this invention.