A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.
STATEMENT OF GOVERNMENT INTEREST
This invention was made with United States government assistance through the U.S. Department of Energy Grant No. DEFG02-ER-45439. The government has certain rights in this invention.