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N-type droping of nanocrystalline diamond films with nitrogen and electrodes made therefrom

United States Patent

September 21, 2004
View the Complete Patent at the US Patent & Trademark Office
Argonne National Laboratory - Visit the Technology Development and Commercialization Website
An electrically conducting n-type ultrananocrystalline diamond (UNCD) having no less than 10.sup.19 atoms/cm.sup.3 of nitrogen is disclosed. A method of making the n-doped UNCD. A method for predictably controlling the conductivity is also disclosed.
Gruen; Dieter M. (Downers Grove, IL), Krauss; Alan R. (late of Naperville, IL), Auciello; Orlando H. (Bolingbrook, IL), Carlisle; John A. (Plainfield, IL)
The University of Chicago (Chicago, IL)
10/ 398,427
December 12, 2003
CONTRACTUAL ORIGIN OF THE INVENTION The United States Government has rights in this invention pursuant to Contract No. W-31-109-ENG-38 between the U.S. Department of Energy (DOE) and The University of Chicago representing Argonne National Laboratory.