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Metal-assisted chemical etch porous silicon formation method

United States Patent

September 14, 2004
View the Complete Patent at the US Patent & Trademark Office
A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.
Li; Xiuling (Champaign, IL), Bohn; Paul W. (Champaign, IL), Sweedler; Jonathan V. (Urbana, IL)
The Board of Trustees of the University of Illinois (Urbana, IL)
09/ 662,682
September 15, 2000
STATEMENT OF GOVERNMENT INTEREST This invention was made with government assistance from the Department of Energy under grant DEFG02-91-ER-45439. The governmental has certain rights in this invention.