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Method of preparing nitrogen containing semiconductor material

United States Patent

September 7, 2004
View the Complete Patent at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
A method of combining group III elements with group V elements that incorporates at least nitrogen from a nitrogen halide for use in semiconductors and in particular semiconductors in photovoltaic cells.
Barber; Greg D. (Denver, CO), Kurtz; Sarah R. (Golden, CO)
Midwest Research Institute (Kansas City, MO)
10/ 344,380
February 5, 2003
CONTRACTUAL ORIGIN OF THE INVENTION The United States Government has rights in this invention under Contract No. DE-AC36-99GO10337 between the United States Department of Energy and the National Renewal Energy Laboratory, a division of the Midwest Research Institute.