The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metal and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layers. In some embodiments the article further comprises electromagnetic devices which may be super conducting properties.
The United States Government has rights to this invention pursuant to Contract No. DE-ACO5-00OR22725 between the United States Department of Energy and UT-Battelle, LLC and Contract No. F33615.99.C.2967 between the Department of Defense and Applied Thin Films, Inc.