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Npn double heterostructure bipolar transistor with ingaasn base region

United States Patent

July 20, 2004
View the Complete Patent at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V.sub.on, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.
Chang; Ping-Chih (Albuquerque, NM), Baca; Albert G. (Albuquerque, NM), Li; Nein-Yi (Albuquerque, NM), Hou; Hong Q. (Albuquerque, NM), Ashby; Carol I. H. (Edgewood, NM)
Sandia Corporation (Albuquerque, NM), Emcore Corporation (Somerset, NJ)
09/ 547,152
April 11, 2000
GOVERNMENT RIGHTS This invention was made with Government support under Contract No. DE-AC04-94AL85000 awarded by the U.S. Department of Energy. The Government has certain rights in the invention.