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Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors

United States Patent

July 6, 2004
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
Non-alloyed, low resistivity contacts for semiconductors using Group III-V and Group II-VI compounds and methods of making are disclosed. Co-implantation techniques are disclosed.
Walukiewicz; Wladyslaw (Kensington, CA), Yu; Kin M. (Lafayette, CA)
The Regents of the University of California (Oakland, CA)
10/ 272,280
October 16, 2002
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT The invention described and claimed herein was made in part utilizing funds supplied by the United States Department of Energy under contract No. DE-AC0376SF000-98 between the U.S. Department of Energy and The Regents of the University of California. The government has certain rights to the invention.