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Junction-side illuminated silicon detector arrays

United States Patent

March 30, 2004
View the Complete Patent at the US Patent & Trademark Office
A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.
Iwanczyk; Jan S. (Los Angeles, CA), Patt; Bradley E. (Sherman Oaks, CA), Tull; Carolyn (Orinda, CA)
Photon Imaging, Inc. (Northridge, CA)
09/ 835,937
April 16, 2001
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT This invention was made with government support under Small Business Innovation Research program (Grant # DE-FG03-99ER82854) awarded by the Department of Energy. The Government has certain rights in this invention.