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Tungsten-doped thin film materials

United States Patent

December 9, 2003
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.
Xiang; Xiao-Dong (Alameda, CA), Chang; Hauyee (Berkeley, CA), Gao; Chen (Berkeley, CA), Takeuchi; Ichiro (Albany, CA), Schultz; Peter G. (Oakland, CA)
U.S. Department of Energy (Washington, DC)
09/ 299,805
April 26, 1999
GOVERNMENT RIGHTS The United States Government has a paid-up license in this invention pursuant to Contract No. DE-AC03-76SF00098 between the United States Department of Energy and the University of California for management of the Lawrence Berkeley National Laboratory.