Skip to Content
Find More Like This
Return to Search

Tailoring nanocrystalline diamond film properties

United States Patent

July 15, 2003
View the Complete Patent at the US Patent & Trademark Office
Argonne National Laboratory - Visit the Technology Development and Commercialization Website
A method for controlling the crystallite size and growth rate of plasma-deposited diamond films. A plasma is established at a pressure in excess of about 55 Torr with controlled concentrations of hydrogen up to about 98% by volume, of unsubstituted hydrocarbons up to about 3% by volume and an inert gas of one or more of the noble gases and nitrogen up to about 98% by volume. The volume ratio of inert gas to hydrogen is preferably maintained at greater than about 4, to deposit a diamond film on a suitable substrate. The diamond film is deposited with a predetermined crystallite size and at a predetermined growth rate.
Gruen; Dieter M. (Downers Grove, IL), McCauley; Thomas G. (Somerville, MA), Zhou; Dan (Orlando, FL), Krauss; Alan R. (Naperville, IL)
The University of Chicago (Chicago, IL)
09/ 255,919
February 23, 1999
CONTRACTUAL ORIGIN OF THE INVENTION The United States Government has rights in this invention pursuant to Contract No. W-31-109-ENG-38 between the U.S. Department of Energy and The University of Chicago representing Argonne National Laboratory.