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Process for growing epitaxial gallium nitride and composite wafers

United States Patent

May 13, 2003
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.
Weber; Eicke R. (Oakland, CA), Subramanya; Sudhir G. (Fremont, CA), Kim; Yihwan (San Mateo, CA), Kruger; Joachim (Berkeley, CA)
The Regents of the University of California (Oakland, CA)
09/ 824,843
April 2, 2001
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT This invention was made with government support under Grant (Contract) No. DE-AC03-76F00098 awarded by The United States Department of Energy. The government has certain rights to this invention.