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Scanning evanescent electro-magnetic microscope

United States Patent

March 18, 2003
View the Complete Patent at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
A novel scanning microscope is described that uses near-field evanescent electromagnetic waves to probe sample properties. The novel microscope is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The inventive scanning evanescent wave electromagnetic microscope (SEMM) can map dielectric constant, tangent loss, conductivity, complex electrical impedance, and other electrical parameters of materials. The quantitative map corresponds to the imaged detail. The novel microscope can be used to measure electrical properties of both dielectric and electrically conducting materials.
Xiang; Xiao-Dong (Alameda, CA), Gao; Chen (Anhui, CN), Schultz; Peter G. (La Jolla, CA), Wei; Tao (Sunnyvale, CA)
The Regents of the University of California (Oakland, CA)
09/ 695,508
October 23, 2000
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT This invention was made with Government support under Contract No. DE-AC03-76SF00098 between the U.S. Department of Energy and the University of California for operation of the Ernest Orlando Lawrence Berkeley National Laboratory. The Government has certain rights in this invention.