A method for producing periodic nanometer-scale arrays of metal or semiconductor junctions on a clean semiconductor substrate surface is provided comprising the steps of: etching the substrate surface to make it hydrophilic, forming, under an inert atmosphere, a crystalline colloid layer on the substrate surface, depositing a metal or semiconductor material through the colloid layer onto the surface of the substrate, and removing the colloid from the substrate surface. The colloid layer is grown on the clean semiconductor surface by withdrawing the semiconductor substrate from a sol of colloid particles.
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT
This invention was made with Government support under grant no. DE-FG03-88ER13932 awarded by the Department of Energy. The government may have certain rights in this invention.