Skip to Content
Find More Like This
Return to Search

Method for enhancing the solubility of boron and indium in silicon

United States Patent

December 24, 2002
View the Complete Patent at the US Patent & Trademark Office
Lawrence Livermore National Laboratory - Visit the Industrial Partnerships Office Website
A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at C.; and for indium, a 1% tensile strain at C., corresponds to an enhancement of the solubility by 200%.
Sadigh; Babak (Oakland, CA), Lenosky; Thomas J. (Pleasanton, CA), Diaz de la Rubia; Tomas (Danville, CA), Giles; Martin (Hillsborough, OR), Caturla; Maria-Jose (Livermore, CA), Ozolins; Vidvuds (Pleasanton, CA), Asta; Mark (Evanston, IL), Theiss; Silva (St. Paul, MN), Foad; Majeed (Santa Clara, CA), Quong; Andrew (Livermore, CA)
The Regents of the University of California (Oakland, CA)
09/ 945,932
September 4, 2001
The United States Government has rights in this invention pursuant to Contract No. W-7405-ENG-48 between the United States Department of Energy and the University of California for the operation of Lawrence Livermore National Laboratory.