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Semiconductor radiation detector

United States Patent

September 24, 2002
View the Complete Patent at the US Patent & Trademark Office
A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.
Patt; Bradley E. (Sherman Oaks, CA), Iwanczyk; Jan S. (Los Angeles, CA), Tull; Carolyn R. (Orinda, CA), Vilkelis; Gintas (Westlake Village, CA)
Photon Imaging, Inc. (Northridge, CA)
09/ 638,738
August 13, 2000
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT This invention was made with government support under Small Business Innovation Research program (grant # DE-FG03-97ER82450) awarded by the Department of Energy. The Government has certain rights in this invention.