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Field emission from bias-grown diamond thin films in a microwave plasma

United States Patent

September 10, 2002
View the Complete Patent at the US Patent & Trademark Office
Argonne National Laboratory - Visit the Technology Development and Commercialization Website
A method of producing diamond or diamond like films in which a negative bias is established on a substrate with an electrically conductive surface in a microwave plasma chemical vapor deposition system. The atmosphere that is subjected to microwave energy includes a source of carbon, nitrogen and hydrogen. The negative bias is maintained on the substrate through both the nucleation and growth phase of the film until the film is continuous. Biases between -100V and -200 are preferred. Carbon sources may be one or more of CH.sub.4, C.sub.2 H.sub.2 other hydrocarbons and fullerenes.
Gruen; Dieter M. (Downers Grove, IL), Krauss; Alan R. (Naperville, IL), Ding; Ming Q. (Beijing, CN), Auciello; Orlando (Bolinbrook, IL)
The University of Chicago (Chicago, IL)
09/ 352,063
July 14, 1999
CONTRACTUAL OF THE INVENTION The United States Government has rights in this invention pursuant to Contract No. W-31-109-ENG-38 between the U.S. Department of Energy and The University of Chicago representing Argonne National Laboratory.