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Semiconductor assisted metal deposition for nanolithography applications

United States Patent

June 25, 2002
View the Complete Patent at the US Patent & Trademark Office
Argonne National Laboratory - Visit the Technology Development and Commercialization Website
An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.
Rajh; Tijana (Naperville, IL), Meshkov; Natalia (Downers Grove, IL), Nedelijkovic; Jovan M. (Belgrade, YU), Skubal; Laura R. (West Brooklyn, IL), Tiede; David M. (Elmhurst, IL), Thurnauer; Marion (Downers Grove, IL)
Argonne National Laboratory (Argonne, IL)
09/ 858,791
May 16, 2001
This invention was made with Government support under Contract No. W-31-109-ENG-38 awarded by the Department of Energy. The Government has certain rights in this invention.