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Low-bandgap double-heterostructure InAsP/GaInAs photovoltaic converters

United States Patent

October 9, 2001
View the Complete Patent at the US Patent & Trademark Office
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A low-bandgap, double-heterostructure PV device is provided, including in optical alignment a first InP.sub.1-y As.sub.y n-layer formed with an n-type dopant, an Ga.sub.x In.sub.1-x As absorber layer, the absorber layer having an n-region formed with an n-type dopant and an p-region formed with a p-type dopant to form a single pn-junction, and a second InP.sub.1-y As.sub.y p-layer formed with a p-type dopant, wherein the first and second layers are used for passivation and minority carrier confinement of the absorber layers.
Wanlass; Mark W. (Golden, CO)
Midwest Research Institute (Kansas City, MO)
09/ 416,014
October 8, 1999
CONTRACTUAL ORIGIN OF THE INVENTION The United States Government has rights in this invention pursuant to Contract No. DE-AC36-99GO10337 between the United States Department of Energy and the Midwest Research Institute.