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Method for ion implantation induced embedded particle formation via reduction

United States Patent

September 25, 2001
View the Complete Patent at the US Patent & Trademark Office
Oak Ridge National Laboratory - Visit the Partnerships Directorate Website
A method for ion implantation induced embedded particle formation via reduction with the steps of ion implantation with an ion/element that will chemically reduce the chosen substrate material, implantation of the ion/element to a sufficient concentration and at a sufficient energy for particle formation, and control of the temperature of the substrate during implantation. A preferred embodiment includes the formation of particles which are nano-dimensional (<100 m-n in size). The phase of the particles may be affected by control of the substrate temperature during and/or after the ion implantation process.
Hampikian; Janet M (Decatur, GA), Hunt; Eden M (Atlanta, GA)
Georgia Tech Research Corp. (Atlanta, GA)
08/ 996,968
December 23, 1997
STATEMENT OF GOVERNMENT INTEREST This research was sponsored in part by the United States Department Of Energy under contract #DE-AC05-960R 22464 with Lockheed Martin Energy Research Corporation, through the SHARE Program under contract #DE-AC05-760R 00033 with Oak Ridge Associated Universities, and by the Office of Naval Research through the Molecular Design Institute at the Georgia Institute of Technology. The government of the United States of America has certain rights in this invention.