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Method for depositing layers of high quality semiconductor material

United States Patent

August 14, 2001
View the Complete Patent at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
Plasma deposition of substantially amorphous semiconductor materials is carried out under a set of deposition parameters which are selected so that the process operates near the amorphous/microcrystalline threshold. This threshold varies as a function of the thickness of the depositing semiconductor layer; and, deposition parameters, such as diluent gas concentrations, must be adjusted as a function of layer thickness. Also, this threshold varies as a function of the composition of the depositing layer, and in those instances where the layer composition is profiled throughout its thickness, deposition parameters must be adjusted accordingly so as to maintain the amorphous/microcrystalline threshold.
Guha; Subhendu (Troy, MI), Yang; Chi C. (Troy, MI)
United Solar Systems Corporation (Troy, MI)
09/ 377,652
August 19, 1999
This work was supported by National Renewable Energy Laboratory under Contract No. ZAK-8-17619-09.