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Control of magnetic direction in multi-layer ferromagnetic devices by bias voltage

United States Patent

August 7, 2001
View the Complete Patent at the US Patent & Trademark Office
Argonne National Laboratory - Visit the Technology Development and Commercialization Website
A system for controlling the direction of magnetization of materials comprising a ferromagnetic device with first and second ferromagnetic layers. The ferromagnetic layers are disposed such that they combine to form an interlayer with exchange coupling. An insulating layer and a spacer layer are located between the first and second ferromagnetic layers. A direct bias voltage is applied to the interlayer exchange coupling, causing the direction of magnetization of the second ferromagnetic layer to change. This change of magnetization direction occurs in the absence of any applied external magnetic field.
You; Chun-Yeol (Hinsdale, IL), Bader; Samuel D. (Oak Park, IL)
The University of Chicago (Chicago, IL)
09/ 467,808
December 20, 1999
This invention was made with government support under Contract No. W-31-109-ENG-38 awarded to the Department of Energy. The Government has certain rights in this invention.